Nitride semiconductor light emitting element
US8053756B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2006 |
| Grant date | Nov 8, 2011 |
| Priority date | — |
| Expiry date | Aug 12, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/81
Abstract
Provided is a nitride semiconductor light emitting element having an improved carrier injection efficiency from a p-type nitride semiconductor layer to an active layer by simple means from a viewpoint utterly different from the prior art. A buffer layer 2, an undoped GaN layer 3, an n-type GaN contact layer 4, an InGaN/GaN superlattice layer 5, an active layer 6, a first undoped InGaN layer 7, a second undoped InGaN layer 8, and a p-type Gan-based contact layer 9 are stacked on a sapphire substrate 1. A p-electrode 10 is formed on the p-type Gan-based contact layer 9. An n-electrode 11 is formed on a surface where the n-type GaN contact layer 4 is exposed as a result of mesa-etching. The first undoped InGaN layer 7 is formed to contact a well layer closest to a p-side in the active layer having a quantum well structure, and subsequently the second undoped InGaN layer 8 is formed thereon. The carrier injection efficiency into the active layer 6 can be improved by making the total film thickness of the first and second undoped InGaN layers 20 nm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.