Group 3-5 nitride semiconductor multilayer substrate, method for manufacturing group 3-5 nitride semiconductor free-standing subtrate, and semiconductor element
US8053811B2 · kind B2 · utility
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16References
10Claims
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Key dates
| Filing date | May 2, 2006 |
| Grant date | Nov 8, 2011 |
| Priority date | — |
| Expiry date | May 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A group 3-5 nitride semiconductor multilayer substrate (1) and a method for manufacturing such substrate are provided. A semiconductor layer (12) is formed on a base substrate (11), and a mask (13) is formed on the semiconductor layer (12). Then, after forming a group 3-5 nitride semiconductor crystalline layer (14) by selective growing, the group 3-5 nitride semiconductor crystalline layer (14) and the base substrate (11) are separated. The crystallinity of the semiconductor layer (12) is lower than that of the group 3-5 nitride semiconductor crystalline layer (14).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.