Spin transistor using epitaxial ferromagnet-semiconductor junction
US8053851B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2008 |
| Grant date | Nov 8, 2011 |
| Priority date | — |
| Expiry date | Aug 29, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/933
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A spin transistor conducive to the miniaturization and large scale integration of devices, because a magnetization direction of a source and a drain is determined by a direction of the epitaxial growth of a ferromagnet. The spin transistor includes a semiconductor substrate having a channel layer formed thereinside; ferromagnetic source and drain epitaxially grown on the semiconductor substrate and magnetized in a longitudinal direction of the channel layer due to magnetocrystalline anisotropy—the source and drain being disposed spaced apart from each other in a channel direction and magnetized in the same direction—; and a gate disposed between the source and the drain to be insulated with the semiconductor substrate and formed on the semiconductor substrate to control the spin of electrons that are passed through the channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.