MOM capacitors integrated with air-gaps
US8053865B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2008 |
| Grant date | Nov 8, 2011 |
| Priority date | — |
| Expiry date | Jan 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit structure combining air-gaps and metal-oxide-metal (MOM) capacitors is provided. The integrated circuit structure includes a semiconductor substrate; a first metallization layer over the semiconductor substrate; first metal features in the first metallization layer; a second metallization layer over the first metallization layer; second metal features in the second metallization layer, wherein the first and the second metal features are non-capacitor features; a MOM capacitor having an area in at least one of the first and the second metallization layers; and an air-gap in the first metallization layer and between the first metal features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.