Implementation of a metal barrier in an integrated electronic circuit
US8053871B2 · kind B2 · utility
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4References
28Claims
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Key dates
| Filing date | Aug 7, 2009 |
| Grant date | Nov 8, 2011 |
| Priority date | — |
| Expiry date | Oct 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal barrier is realized on top of a metal portion of a semiconductor product, by forming a metal layer on the surface of the metal portion, with this metal layer comprising a cobalt-based metal material. Then, after an optional deoxidation step, a silicidation step and a nitridation step of the cobalt-based metal material of the metal layer are performed. The antidiffusion properties of copper atoms (for example) and the antioxidation properties of the metal barrier are improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.