Isolation structure for protecting dielectric layers from degradation
US8053902B2 · kind B2 · utility
21Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2008 |
| Grant date | Nov 8, 2011 |
| Priority date | — |
| Expiry date | Apr 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit structure includes a semiconductor substrate; and an interconnect structure overlying the semiconductor substrate. A solid metal ring is formed in the interconnect structure, with substantially no active circuit being inside the solid metal ring. The integrated circuit structure further includes a through-silicon via (TSV) having a portion encircled by the solid metal ring. The TSV extends through the interconnect structure into the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.