Driver circuit for gallium nitride (GaN) heterojunction field effect transistors (HFETs)
US8054110B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2010 |
| Grant date | Nov 8, 2011 |
| Priority date | — |
| Expiry date | Feb 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/018521
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A driver circuit and integrated circuit implementation of a driver circuit for driving a GaN HFET device is disclosed. The driver circuit includes a resonant drive circuit having an LC circuit with an inductance and a capacitance. The capacitance of the LC circuit includes the gate-source capacitance of the GaN HFET device. The driver circuit further includes a level shifter circuit configured to receive a first signal and to amplify the first signal to a second signal suitable for driving a GaN HFET device. The resonant drive circuit is controlled based at least in part on the second signal such that the resonant drive circuit provides a first voltage to the GaN HFET device to control the GaN HFET device to operate in a conducting state and to provide a second voltage to the GaN HFET device to control the GaN HFET device to operate in a non-conducting state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.