Bo Wang
2Patents
2h-index
4Co-inventors
37Inventor score
Filing activity: Oct 27, 1999 → Jan 20, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8054110B2 | Driver circuit for gallium nitride (GaN) heterojunction field effect transistors (HFETs) | Electricity | 25 | Active |
| US6118689A | Two-port 6T CMOS SRAM cell structure for low-voltage VLSI SRAM with single-bit-line simultaneous read-and-write access (SBLSRWA) capability | Physics | 20 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.