Light-emitting diode with textured substrate
US8058082B2 · kind B2 · utility
19Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2008 |
| Grant date | Nov 15, 2011 |
| Priority date | — |
| Expiry date | Jul 5, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.