Inventor · Hsinchu, TW

Hung-Ta Lin

38Patents
9h-index
35Co-inventors
71Inventor score

Filing activity: Dec 27, 2002 → Jun 27, 2016

Most-cited inventions

PatentTitleAreaCited byStatus
US8440517B2 FinFET and method of fabricating the same Electricity 249 Active
US8497177B1 Method of making a FinFET device Electricity 217 Active
US7323162B2 Aqueous cosmetic coloring and gloss compositions having film formers Human Necessities 20 Expired
US8058082B2 Light-emitting diode with textured substrate Electricity 19 Active
US8629465B2 Light-emitting diodes on concave texture substrate Electricity 17 Active
US9099388B2 III-V multi-channel FinFETs Electricity 15 Active
US9209300B2 Fin field effect transistor Electricity 10 Active
US8134163B2 Light-emitting diodes on concave texture substrate Electricity 9 Active
US8822290B2 FinFETs and methods for forming the same Electricity 9 Active
US8809940B2 Fin held effect transistor Electricity 5 Active
US9029246B2 Methods of forming epitaxial structures Electricity 4 Active
US8236583B2 Method of separating light-emitting diode from a growth substrate Electricity 3 Active
US9379215B2 Fin field effect transistor Electricity 3 Active
US9478631B2 Vertical-gate-all-around devices and method of fabrication thereof Electricity 3 Active
US8629037B2 Forming a protective film on a back side of a silicon wafer in a III-V family fabrication process Electricity 3 Active
US8629013B2 Junction leakage reduction through implantation Electricity 3 Active
US9853102B2 Tunnel field-effect transistor Electricity 3 Active
US9716091B2 Fin field effect transistor Electricity 3 Active
US8659033B2 Light-emitting diode with textured substrate Electricity 2 Active
US8772831B2 III-nitride growth method on silicon substrate Electricity 2 Active
US8791504B2 Substrate breakdown voltage improvement for group III-nitride on a silicon substrate Electricity 2 Active
US8779445B2 Stress-alleviation layer for LED structures Electricity 2 Active
US9184289B2 Semiconductor device and formation thereof Electricity 2 Active
US9741800B2 III-V multi-channel FinFETs Electricity 1 Active
US9397169B2 Epitaxial structures Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.