Front lit PIN/NIP diode having a continuous anode/cathode
US8058091B2 · kind B2 · utility
1Cited by
8References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2008 |
| Grant date | Nov 15, 2011 |
| Priority date | — |
| Expiry date | Sep 14, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A photodetector includes a semiconductor substrate having first and second main surfaces opposite to each other. The photodetector includes at least one trench formed in the first main surface and a first anode/cathode region having a first conductivity formed proximate the first main surface and sidewalls of the at least one trench. The photodetector includes a second anode/cathode region proximate the second main surface. The second anode/cathode region has a second conductivity opposite the first conductivity. The at least one trench extends to the second main surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.