Microelectronic device
US8058096B2 · kind B2 · utility
1Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2007 |
| Grant date | Nov 15, 2011 |
| Priority date | — |
| Expiry date | Mar 21, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
A thin film transistor is manufactured by a process including forming an oxide semiconductor channel, patterning the oxide semiconductor channel with a photolithographic process, and exposing the patterned oxide semiconductor channel to an oxygen containing plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.