Methods of forming resistive memory devices
US8058097B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | May 20, 2010 |
| Grant date | Nov 15, 2011 |
| Priority date | — |
| Expiry date | May 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
Methods of forming a resistive memory device include forming an insulation layer on a semiconductor substrate including a conductive pattern, forming a contact hole in the insulation layer to expose the conductive pattern, forming a lower electrode in the contact hole, forming a variable resistive oxide layer in the contact hole on the lower electrode, forming a middle electrode in the contact hole on the variable resistive oxide layer, forming a buffer oxide layer on the middle electrode and the insulation layer, and forming an upper electrode on the buffer oxide layer. Related resistive memory devices are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.