Formation of metal gate electrode using rare earth alloy incorporated into mid gap metal
US8058122B2 · kind B2 · utility
0Cited by
1References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2008 |
| Grant date | Nov 15, 2011 |
| Priority date | — |
| Expiry date | Sep 8, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
Abstract
Semiconductor devices and fabrication methods are provided, in which metal transistor gates are provided for MOS transistors. A rare earth-rare earth alloy incorporated metal nitride layer is formed above a gate dielectric. This process provides adjustment of the gate electrode work function, thereby tuning the threshold voltage of the resulting NMOS transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.