Method for recovering damage of low dielectric insulating film for manufacturing semiconductor device
US8058153B2 · kind B2 · utility
2Cited by
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5Claims
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Key dates
| Filing date | Jun 12, 2008 |
| Grant date | Nov 15, 2011 |
| Priority date | — |
| Expiry date | Jul 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a damage recovery method capable of recovering electrical characteristics of a low dielectric insulating film sufficiently while suppressing oxidation of buried metal and generation of pattern defaults.A damaged functional group generated in a surface of the low dielectric insulating film by a processing is substituted with a hydrophobic functional group (ST. 2). A damaged component present under a dense layer generated in the surface of the low dielectric insulating film by the substitution process is recovered by using an ultraviolet heating process (ST. 3).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.