Power semiconductor module and method of manufacturing the same
US8058722B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2009 |
| Grant date | Nov 15, 2011 |
| Priority date | — |
| Expiry date | Oct 22, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a power semiconductor module. The module includes metal plates each having a first through hole, with an anodic oxidation layer formed on a surface of metal plates and an interior of the first through hole. A cooling member has a second through hole at a position corresponding to the first through hole, and the metal plates are attached to both sides of the cooling member. A circuit layer is formed on the anodic oxidation layer and performs an interlayer connection through a via formed in the first and second through holes. A power device is connected to the circuit layer. A resin encapsulant encloses the circuit layer and the power device. A housing is installed to each of the metal plates to form a sealing space for the resin encapsulant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.