CMP slurry, preparation method thereof and method of polishing substrate using the same
US8062547B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 2, 2006 |
| Grant date | Nov 22, 2011 |
| Priority date | — |
| Expiry date | Jul 24, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A CMP slurry is provided comprising polishing particles, the polishing particle comprising organically modified colloidal silica. Also, a method of preparing a CMP slurry is provided, comprising the steps of: preparing polishing particles comprising organically modified silica; converting the polishing particles into an aqueous state; and adding pure water, a hydrophilic additive and a dispersing agent to the polishing particles. The polishing particles can be synthesized using a sol-gel process. According to the invention, a slurry having excellent polishing properties can be prepared, in which the surface properties of colloidal silica are changed to control the physical properties of the polishing particles and which can ensure a desired CMP removal rate while minimizing the occurrence of scratches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.