Patent · US Active

Phase change memories with improved programming characteristics

US8062921B2 · kind B2 · utility

1Cited by
6References
5Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 3, 2009
Grant dateNov 22, 2011
Priority date
Expiry dateFeb 15, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B63/24

Abstract

A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achieves better cycling performance. Such alloys may also experience faster programming and may have set and reset programming speeds that are substantially similar.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.