Patent · US Active

Memristor amorphous metal alloy electrodes

US8063395B2 · kind B2 · utility

5Cited by

0References

20Claims

0Family size

Assignee

HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. · US

Inventors

Qiangfei Xia · Palo Alto, US
Jianhua Yang · Palo Alto, US
Shih-Yuan Wang · Palo Alto, US

Key dates

Filing date	Sep 30, 2009
Grant date	Nov 22, 2011
Priority date	—
Expiry date	Jun 23, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10N70/884

Abstract

A nanoscale switching device comprises at least two electrodes, each of a nanoscale width; and an active region disposed between and in electrical contact with the electrodes, the active region containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field, wherein at least one of the electrodes comprises an amorphous conductive material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.