Inventor · Palo Alto, CA, US

Jianhua Yang

74Patents
8h-index
39Co-inventors
74Inventor score

Filing activity: Oct 29, 2008 → Aug 20, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US8415652B2 Memristors with a switching layer comprising a composite of multiple phases Physics 16 Active
US8575585B2 Memristive device Electricity 15 Active
US8525553B1 Negative differential resistance comparator circuits Electricity 15 Active
US8450711B2 Semiconductor memristor devices Physics 12 Active
US8093575B2 Memristive device with a bi-metallic electrode Electricity 10 Active
US7985962B2 Memristive device Electricity 10 Active
US8891284B2 Memristors based on mixed-metal-valence compounds Physics 10 Active
US8546785B2 Memristive device Electricity 8 Active
US9040948B2 Nanoscale switching device Electricity 8 Active
US8325507B2 Memristors with an electrode metal reservoir for dopants Electricity 7 Active
US8921960B2 Memristor cell structures for high density arrays Electricity 7 Active
US8259485B2 Multilayer structures having memory elements with varied resistance of switching layers Physics 7 Active
US8766228B2 Electrically actuated device and method of controlling the formation of dopants therein Electricity 7 Active
US8207593B2 Memristor having a nanostructure in the switching material Emerging Cross-Sectional Technologies 7 Active
US9082533B2 Memristive element based on hetero-junction oxide Physics 6 Active
US8324976B2 Oscillator circuitry having negative differential resistance Electricity 6 Active
US8063395B2 Memristor amorphous metal alloy electrodes Electricity 5 Active
US8331131B2 Changing a memristor state Physics 5 Active
US8385101B2 Memory resistor having plural different active materials Physics 5 Active
US9870822B2 Non-volatile memory element with thermal-assisted switching control Physics 5 Active
US8455852B2 Controlled placement of dopants in memristor active regions Electricity 4 Active
US11126403B2 True random number generator (TRNG) circuit using a diffusive memristor Electricity 4 Active
US8830727B2 Multi-level memory cell with continuously tunable switching Physics 4 Active
US8710483B2 Memristive junction with intrinsic rectifier Physics 3 Active
US8829581B1 Resistive memory devices Performing Operations; Transporting 3 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.