Patent · US Active

Assembly of nanoscaled field effect transistors

US8063450B2 · kind B2 · utility

81Cited by

6References

20Claims

0Family size

Assignee

QUNANO AB · SE

Inventors

Lars-Erik Wernersson · Lund, SE
Erik Lind · Lund, SE
Tomas Bryllert · Handen, SE
Jonas Ohlsson · Malmö, SE
Truls Lowgren · Palo Alto, US
Lars Samuelson · Malmö, SE
Claes Thelander · Lund, SE

Key dates

Filing date	Sep 19, 2007
Grant date	Nov 22, 2011
Priority date	—
Expiry date	Sep 19, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/85
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

The present invention relates to vertical nanowire transistors with a wrap-gated geometry. The threshold voltage of the vertical nanowire transistors is controlled by the diameter of the nanowire, the doping of the nanowire, the introduction of segments of heterostructures in the nanowire, the doping in shell-structures surrounding the nanowire, tailoring the work function of the gate stack, by strain engineering, by control of the dielectrica or the choice of nanowire material. Transistors with varying threshold voltages are provided on the same substrate, which enables the design of advanced circuits utilizing the shifts in the threshold voltages, similar to the directly coupled field logic.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.