Semiconductor substrate for solid-state image sensing device as well as solid-state image sensing device and method for producing the same
US8063466B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | Sep 7, 2007 |
| Grant date | Nov 22, 2011 |
| Priority date | — |
| Expiry date | Dec 2, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a semiconductor substrate for solid-state image sensing device in which the production cost is lower than that of a gettering method through a carbon ion implantation and problems such as occurrence of particles at a device production step and the like are solved.Silicon substrate contains solid-soluted carbon having a concentration of 1×1016-1×1017 atoms/cm3 and solid-soluted oxygen having a concentration of 1.4×1018-1.6×1018 atoms/cm3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.