Method for resizing pattern to be written by lithography technique, and charged particle beam writing method
US8065635B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2007 |
| Grant date | Nov 22, 2011 |
| Priority date | — |
| Expiry date | Mar 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3026
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for resizing a pattern to be written by using lithography technique includes calculating a first dimension correction amount of a pattern for correcting a dimension error caused by a loading effect, for each small region made by virtually dividing a writing region of a target workpiece into meshes of a predetermined size, based on an area density of the each small region, calculating a second dimension correction amount in accordance with a line width dimension of the pattern to be written in the each small region, correcting the first dimension correction amount by using the second dimension correction amount, and resizing the line width dimension of the pattern by using a corrected first dimension correction amount, and outputting a result of the resizing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.