Semiconductor substrate temperature determination
US8066430B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2007 |
| Grant date | Nov 29, 2011 |
| Priority date | — |
| Expiry date | Feb 6, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K7/34
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The invention provides a method and a device for determining the temperature of a semiconductor substrate. A resonance circuit (110) is provided on the semiconductor substrate and is formed by a junction capacitor (11) and an inductor (12). The substrate is placed on a holder and the resonance circuit (110) is irradiated with electromagnetic energy of an electromagnetic field (5) generated by a radiation device (200). A resonance frequency of the resonance circuit (110) is determined by detecting an effect of the resonance circuit (110) on the irradiated electromagnetic field (5), and a temperature of the semiconductor substrate is determined as a function of the resonance frequency. The method and device according to the invention provide for a more accurate determination of the temperature of the semiconductor substrate due to an increased sensitivity to the temperature of the junction capacitor (11).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.