Oxynitride bilayer formed using a precursor inducing a high charge trap density in a top layer of the bilayer
US8067284B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 8, 2008 |
| Grant date | Nov 29, 2011 |
| Priority date | — |
| Expiry date | Apr 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a bilayer charge storing layer and methods of forming the same are provided. Generally, the method includes: (i) forming a first layer of the bilayer charge storing layer; and (ii) forming a second layer formed on a surface of the first layer, the second layer including an oxynitride charge trapping layer. Preferably, the first layer includes a substantially trap free oxynitride layer. More preferably, the oxynitride charge trapping layer includes a significantly higher stoichiometric composition of silicon than that of the first layer. In certain embodiments, the oxynitride charge trapping layer has a concentration of carbon selected to increase the number of traps therein. Other embodiments are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.