Image sensor and method for forming the same
US8067301B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2010 |
| Grant date | Nov 29, 2011 |
| Priority date | — |
| Expiry date | Aug 5, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
A reliable image sensor and a method for forming the same are provided. The image sensor includes a photo-detective device. At least one transistor is electrically connected to the photo-detective device for outputting charges stored in the photo-detective device. A transistor directly connected to the photo-detective device includes a gate electrode pattern and an ion-implantation interrupting pattern arranged on the gate electrode pattern. Since the ion-implantation interrupting pattern is located on an upper portion of the gate electrode pattern of the transistor in the vicinity of the photo-detective device, a threshold voltage of the gate electrode pattern of the transistor in the vicinity of the photo-detective device is adjusted to a desired value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.