MEMS device, MEMS device module and acoustic transducer
US8067811B2 · kind B2 · utility
2Cited by
8References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2010 |
| Grant date | Nov 29, 2011 |
| Priority date | — |
| Expiry date | Nov 2, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04R2410/03
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A MEMS device includes a first insulating film formed on a semiconductor substrate, a vibrating film formed on the first insulating film, and a fixed film above the vibrating film with an air gap being interposed therebetween. The semiconductor substrate has a region containing N-type majority carriers. A concentration of N-type majority carriers in a portion of the semiconductor substrate where the semiconductor substrate contacts the first insulating film, is higher than a concentration of N-type majority carriers in the other portion of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.