Group III-nitride layers with patterned surfaces
US8070966B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2008 |
| Grant date | Dec 6, 2011 |
| Priority date | — |
| Expiry date | Sep 24, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02639
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.