Method for forming voltage sustaining layer with opposite-doped islands for semiconductor power devices
US8071450B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 16, 2009 |
| Grant date | Dec 6, 2011 |
| Priority date | — |
| Expiry date | Jun 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/137
Abstract
A method of manufacturing a semiconductor device includes preparing a semiconductor wafer with a substrate of a first conductivity type and forming a first epitaxial layer of the first conductivity type on the substrate. The first epitaxial layer has a first thickness. The method further includes growing a first oxide layer on the first epitaxial layer, masking the first oxide layer, ion implanting to create at least one embedded region of a second conductivity type in the first epitaxial layer, removing the first oxide layer, and forming a second epitaxial layer of the first conductivity type on the first epitaxial layer. The second epitaxial layer has the first thickness minus a thickness equal to a thickness of the at least one embedded region of the second conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.