Atomic layer deposition of hafnium lanthanum oxides
US8071452B2 · kind B2 · utility
531Cited by
33References
47Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 27, 2009 |
| Grant date | Dec 6, 2011 |
| Priority date | — |
| Expiry date | Apr 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided an improved method for depositing thin films using precursors to deposit binary oxides by atomic layer deposition (ALD) techniques. Also disclosed is an ALD method for depositing a high-k dielectric such as hafnium lanthanum oxide (HfLaO) on a substrate. Embodiments of the present invention utilize a combination of ALD precursor elements and cycles to deposit a film with desired physical and electrical characteristics. Electronic components and systems that integrate devices fabricated with methods consistent with the present invention are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.