Method for manufacturing semiconductor device
US8071460B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2008 |
| Grant date | Dec 6, 2011 |
| Priority date | — |
| Expiry date | Dec 4, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of manufacturing a semiconductor device, a first film is formed directly on a semiconductor substrate and a second film is formed on the first film. A region of the second film is then etched to form an opening that exposes the first film. The first film is then arbitrarily patterned by etching to expose a surface of the semiconductor substrate. Thereafter, the second film and the exposed surface of the semiconductor substrate are simultaneously etched using the patterned first film as a mask and in an etching ambient having a low etching rate for the first film and having a high etching rate for the second film and the semiconductor substrate until the second film is almost completely etched and a detection amount of a monitored element of the first film increases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.