Semiconductor device and method of manufacturing semiconductor device
US8071468B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2010 |
| Grant date | Dec 6, 2011 |
| Priority date | — |
| Expiry date | Feb 3, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method of manufacturing a semiconductor device, the method including performing at least one of: processing, when forming the first redistribution layer, of forming the first electrically conductive material layer by growing the first electrically conductive material using electroplating, and polishing the first resist film and the first electrically conductive material layer from the main surface side to flatten their surfaces; and processing, when forming the second redistribution layer, forming the second electrically conductive material layer by growing the second electrically conductive material using electroplating, and polishing the second resist film and the second electrically conductive material layer from the main surface side to flatten their surfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.