Chemical mechanical polishing composition and methods relating thereto
US8071479B2 · kind B2 · utility
13Cited by
5References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 11, 2008 |
| Grant date | Dec 6, 2011 |
| Priority date | — |
| Expiry date | May 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method for chemical mechanical polishing of a substrate comprising a barrier material in the presence of at least one of an interconnect metal and a low-k dielectric material using a chemical mechanical polishing composition comprising water; 1 to 40 wt % abrasive having an average particle size of ≦100 nm; 0.001 to 5 wt % quaternary compound; a material having a formula (I):wherein R is selected from C2-C20 alkyl, C2-C20 aryl, C2-C20 aralkyl and C2-C20 alkaryl; wherein x is an integer from 0 to 20; wherein y is an integer from 0 to 20; wherein x+y≧1; and, wherein the chemical mechanical polishing composition has a pH≦5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.