Patterning method using stacked structure
US8071487B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Aug 15, 2006 |
| Grant date | Dec 6, 2011 |
| Priority date | — |
| Expiry date | May 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A stacked structure for patterning a material layer to form an opening pattern with a predetermined opening width in the layer is provided. The stacked structure includes an underlayer, a silicon rich organic layer, and a photoresist layer. The underlayer is on the material layer. The silicon rich organic layer is between the underlayer and the photoresist layer. The thickness of the photoresist layer is smaller than that of the underlayer and larger than two times of the thickness of the silicon rich organic layer. The thickness of the underlayer is smaller than three times of the predetermined opening width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.