Patent · US Active

Silicon based nanoscale crossbar memory

US8071972B2 · kind B2 · utility

87Cited by

2References

51Claims

0Family size

Assignee

THE REGENTS OF THE UNIVERSITY OF MICHIGAN · US

Inventors

Wei Lu · Ann Arbor, US
Sung Hyun Jo · Sunnyvale, US
Kuk-Hwan Kim · Milpitas, US

Key dates

Filing date	Oct 20, 2009
Grant date	Dec 6, 2011
Priority date	—
Expiry date	Feb 17, 2030

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/81
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The present application describes a crossbar memory array. The memory array includes a first array of parallel nanowires of a first material and a second array of parallel nanowires of a second material. The first and the second array are oriented at an angle with each other. The array further includes a plurality of nanostructures of non-crystalline silicon disposed between a nanowire of the first material and a nanowire of the second material at each intersection of the two arrays. The nanostructures form a resistive memory cell together with the nanowires of the first and second materials.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.