Inventor · Ann Arbor, MI, US

Wei Lu

50Patents
8h-index
30Co-inventors
78Inventor score

Filing activity: May 15, 2000 → Jun 22, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US8071972B2 Silicon based nanoscale crossbar memory Physics 87 Active
US8374018B2 Resistive memory using SiGe material Physics 78 Active
US8502185B2 Switching device having a non-linear element Electricity 50 Active
US8351241B2 Rectification element and method for resistive switching for non volatile memory device Physics 48 Active
US8441835B2 Interface control for improved switching in RRAM Physics 46 Active
US8767441B2 Switching device having a non-linear element Physics 21 Active
US9620206B2 Memory array architecture with two-terminal memory cells Physics 14 Active
US9036400B2 Method and structure of monolithically integrated IC and resistive memory using IC foundry-compatible processes Physics 10 Active
US7858965B2 Nanowire heterostructures Physics 7 Active
US9590013B2 Device switching using layered device structure Physics 6 Active
US8884261B2 Device switching using layered device structure Physics 6 Active
US8750019B2 Resistive memory using SiGe material Physics 6 Active
US9112145B1 Rectified switching of two-terminal memory via real time filament formation Electricity 5 Active
US9543359B2 Switching device having a non-linear element Electricity 5 Active
US8599601B2 Interface control for improved switching in RRAM Physics 5 Active
US9520557B2 Silicon based nanoscale crossbar memory Physics 5 Active
US11266859B2 Neutron capture therapy system Physics 4 Active
US8421635B2 Patient bed Physics 3 Active
US8930174B2 Modeling technique for resistive random access memory (RRAM) cells Physics 3 Active
US10812083B2 Techniques for computing dot products with memory devices Physics 2 Active
US9048658B2 Resistive switching for non volatile memory device using an integrated breakdown element Physics 1 Active
US9627614B2 Resistive switching for non volatile memory device using an integrated breakdown element Physics 1 Active
US10498341B2 Sparse coding with memristor networks Physics 1 Active
US9508425B2 Nanoscale metal oxide resistive switching element Electricity 1 Active
US8750020B2 Resistive switching for non volatile memory device using an integrated breakdown element Physics 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.