Semiconductor device and method for fabricating the same
US8072018B2 · kind B2 · utility
3Cited by
1References
14Claims
0Family size
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Key dates
| Filing date | Dec 28, 2007 |
| Grant date | Dec 6, 2011 |
| Priority date | — |
| Expiry date | Apr 1, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/30
Abstract
A semiconductor device is provided. The semiconductor device comprises a substrate. A lamination structure is on the substrate along a first direction. The lamination structure comprises a plurality of conductive layers arranged from bottom to top and separated from each other, and each of the conductive layers has a channel region and an adjacent source/drain doped region along the first direction. A first gate structure is on a sidewall of the channel region of each conductive layer. The first gate structure comprises an inner first gate insulating layer and an outer first gate conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.