Resistance-change memory device
US8072789B2 · kind B2 · utility
4Cited by
1References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2009 |
| Grant date | Dec 6, 2011 |
| Priority date | — |
| Expiry date | Feb 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistance-change memory device is provided and includes a stack constituting a tunnel magnetoresistance effect element that has a magnetic layer in which a direction of magnetization is switchable and that is formed on a conductive layer, and the stack is included in a resistance-change memory cell performing data writing utilizing a spin transfer effect caused by current injection. The stack is formed such that a line connecting centers of respective layers of the stack is tilted with respect to a direction perpendicular to a surface of the conductive layer having the stack formed thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.