Method and system of finding a read voltage for a flash memory
US8072805B2 · kind B2 · utility
80Cited by
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22Claims
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Key dates
| Filing date | Aug 18, 2009 |
| Grant date | Dec 6, 2011 |
| Priority date | — |
| Expiry date | Apr 3, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/1006
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and system of finding a read voltage for a flash memory is disclosed. Data are read from array cells of the flash memory with a default read voltage, and a recorded state bit number that is recorded during programming is also read. Determine an optimal read voltage if the readout data do not pass the error correction control (ECC). Data are then re-read from the array cells of the flash memory with the determined optimal read voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.