Backside illuminated image sensor with shallow backside trench for photodiode isolation
US8076170B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 11, 2010 |
| Grant date | Dec 13, 2011 |
| Priority date | — |
| Expiry date | Nov 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. The sensor layer further comprises a plurality of backside trenches formed in the backside surface of the sensor layer and arranged to provide isolation between respective pairs of the photosensitive elements. The backside trenches have corresponding backside field isolation implant regions formed in the sensor layer, and the resulting structure provides reductions in carrier recombination and crosstalk between adjacent photosensitive elements. The image sensor may be implemented in a digital camera or other type of digital imaging device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.