Method of fabricating nonvolatile memory device
US8076198B2 · kind B2 · utility
193Cited by
2References
11Claims
0Family size
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Key dates
| Filing date | Jan 13, 2010 |
| Grant date | Dec 13, 2011 |
| Priority date | — |
| Expiry date | Jan 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/20
Abstract
A method of fabricating a nonvolatile memory device with a three-dimensional structure includes alternately stacking first and second material layers in two or more layers on a semiconductor substrate, forming trenches penetrating the stacked first and second material layers by performing a first etching process, and removing the second material layers exposed in the trenches by performing a second etching process. The first and second material layers are formed of materials that have the same main component but have different impurity contents, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.