Patent · US Active

Low noise transistor and method of making same

US8076228B2 · kind B2 · utility

7Cited by

15References

105Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Adrian Berthold · Birkenfeld, DE
Michael Bianco · Malibu, US
Reinhard Mahnkopf · Oberhaching, DE

Key dates

Filing date	Jan 29, 2007
Grant date	Dec 13, 2011
Priority date	—
Expiry date	Jan 29, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/693
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A low noise transistor and a method of making a low noise transistor. A noise-reducing agent is introduced into the gate electrode and then moved into the gate dielectric of a transistor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.