PECVD oxide-nitride and oxide-silicon stacks for 3D memory application
US8076250B1 · kind B1 · utility
461Cited by
5References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 6, 2010 |
| Grant date | Dec 13, 2011 |
| Priority date | — |
| Expiry date | Oct 6, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0234
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A layer stack of different materials is deposited on a substrate in a single plasma enhanced chemical vapor deposition processing chamber while maintaining a vacuum. A substrate is placed in the processing chamber and a first processing gas is used to form a first layer of a first material on the substrate. A plasma purge and gas purge are performed before a second processing gas is used to form a second layer of a second material on the substrate. The plasma purge and gas purge are repeated and the additional layers of first and second materials are deposited on the layer stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.