Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus
US8076251B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2010 |
| Grant date | Dec 13, 2011 |
| Priority date | — |
| Expiry date | Sep 29, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an oxide, nitride, or oxynitride film on the substrate by alternately repeating: (a) forming a layer containing an element on the substrate by supplying and exhausting first and second source gases containing the element into and from the process vessel; and (b) changing the layer containing the element into an oxide, nitride, or oxynitride layer by supplying and exhausting reaction gas different from the first and second source gases into and from the process vessel; and unloading the substrate from the process vessel. The first source gas is more reactive than the second source gas, and an amount of the first source gas supplied into the process vessel is set to be less than that of the second source gas supplied into the process vessel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.