Multi-source plasma focused ion beam system
US8076650B2 · kind B2 · utility
33Cited by
30References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2007 |
| Grant date | Dec 13, 2011 |
| Priority date | — |
| Expiry date | Sep 17, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31749
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides a plasma ion beam system that includes multiple gas sources and that can be used for performing multiple operations using different ion species to create or alter submicron features of a work piece. The system preferably uses an inductively coupled, magnetically enhanced ion beam source, suitable in conjunction with probe-forming optics sources to produce ion beams of a wide variety of ions without substantial kinetic energy oscillations induced by the source, thereby permitting formation of a high resolution beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.