Group III intride semiconductor light emitting element
US8076684B2 · kind B2 · utility
2Cited by
10References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 5, 2007 |
| Grant date | Dec 13, 2011 |
| Priority date | — |
| Expiry date | May 22, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34333
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A group III nitride semiconductor light emitting element, comprising having a light emitting layer with a multiquantum well structure formed of a group III nitride semiconductor. The light emitting layer has plural well layers, and the plural well layers are formed to coincide in emission wavelength with each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.