Back-illuminated image sensors having both frontside and backside photodetectors

US8076746B2 · kind B2 · utility

Assignee

• OmniVision Technologies, Inc. · US

Inventors

• John P. McCarten · Penfield, US
• Cristian A. Tivarus · Rochester, US
• Joseph R. Summa · Hilton, US
• Eric G. Stevens · Rochester, US
• Hung Q. Doan · Rochester, US
• Robert M. Guidash · Rochester, US

Key dates

• Filing date: Jun 26, 2009
• Grant date: Dec 13, 2011
• Expiry date: Nov 18, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/14

Abstract

A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. One or more frontside regions of a second conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the second conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors of the first conductivity type separate from the plurality of frontside photodetectors are formed in the sensor layer contiguous to portions of the region of the second conductivity type. A voltage terminal is disposed on the frontside of the sensor layer. One or more connecting regions of the second conductivity type are disposed in respective portions of the sensor layer between the voltage terminal and the backside region for electrically connecting the voltage terminal to the backside region.