Semiconductor device

US8076749B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventor

• Mitsuhiko Kitagawa · Tokyo, JP

Key dates

• Filing date: Feb 13, 2008
• Grant date: Dec 13, 2011
• Expiry date: Dec 26, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/826

Abstract

A semiconductor device includes: a first insulating layer; a semiconductor layer provided on the first insulating layer; a first semiconductor region selectively provided in the semiconductor layer; a second semiconductor region selectively provided in the semiconductor layer and spaced from the first semiconductor region; a first main electrode provided in contact with the first semiconductor region; a second main electrode provided in contact with the second semiconductor region; a second insulating layer provided on the semiconductor layer; a first conductive material provided in the second insulating layer above a portion of the semiconductor layer located between the first semiconductor region and the second semiconductor region; and a second conductive material provided in a trench provided in a portion of the semiconductor layer opposed to the first conductive material, being in contact with the first conductive material, and reaching the first insulating layer.