IC interconnect

US8076768B2 · kind B2 · utility

Assignee

• QUALCOMM Incorporated · US

Inventors

• Kenneth Kaskoun · Berlin, DE
• Shiqun Gu · San Diego, US
• Bart Swinnen · Holsbeek, BE

Key dates

• Filing date: Nov 3, 2010
• Grant date: Dec 13, 2011
• Expiry date: Nov 3, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A multi-tiered IC device contains a first die including a substrate with a first and second set of vias. The first set of vias extends from one side of the substrate, and the second set of vias extend from an opposite side of the substrate. Both sets of vias are coupled together. The first set of vias are physically smaller than the second set of vias. A second die having a set of interconnects is stacked relative to the first die in which the interconnects couple to the first set of vias.