Method of making a vertical phase change memory (PCM) and a PCM device
US8080439B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2008 |
| Grant date | Dec 20, 2011 |
| Priority date | — |
| Expiry date | Oct 21, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24479
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of making a phase change random access memory (PCM) device comprises forming a PCM stack that includes a heater layer, phase change material layer, and a top electrode layer. A top protection layer is formed overlying the PCM stack. The top protection layer and a first portion of the PCM stack are then patterned, wherein the first portion of the PCM stack excludes the heater layer. A sidewall protection feature is formed along a sidewall of the patterned top protection layer and first portion of the PCM stack. The heater layer is etched using (i) the sidewall protection feature and (ii) the patterned top protection layer and first portion of the PCM stack collectively as a mask to form a self-aligned heater layer bottom electrode of the PCRAM stack, thereby completing a memory bit of the PCRAM device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.